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Acceptor - An element,such as boron,indium,and gallium used to create a free hole in a semiconductor.The acceptor atoms are required to have one less valence electron than the semiconductor.
受主——一種用來在半導(dǎo)體中形成空穴的元素，比如硼、銦和鎵。受主原子必須比半導(dǎo)體元素少一價電子。?
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Alignment Precision - Displacement of patterns that occurs during the photolithography process.
套準(zhǔn)精度——在光刻工藝中轉(zhuǎn)移圖形的精度。?
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Anisotropic - A process of etching that has very little or no undercutting
各向異性——在蝕刻過程中，只做少量或不做側(cè)向凹刻。?
Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the rest of stains, fingerprints, water spots, etc.
沾污區(qū)域——任何在晶圓片表面的外來粒子或物質(zhì)。由沾污、手印和水滴產(chǎn)生的污染。?
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Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
橢圓方位角——測量入射面和主晶軸之間的角度。?
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Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
背面——晶圓片的底部表面。（注：不推薦該術(shù)語，建議使用“背部表面”）?
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Base Silicon Layer - The silicon wafer that is located underneath the insator layer, which supports the silicon film on top of the wafer.
底部硅層——在絕緣層下部的晶圓片，是頂部硅層的基礎(chǔ)。?
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Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
雙極晶體管——能夠采用空穴和電子傳導(dǎo)電荷的晶體管。?
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Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insating layer.
綁定晶圓片——兩個晶圓片通過二氧化硅層結(jié)合到一起，作為絕緣層。?
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Bonding Interface - The area where the bonding of two wafers occurs.
綁定面——兩個晶圓片結(jié)合的接觸區(qū)。?
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Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
埋層——為了電路電流流動而形成的低電阻路徑，攙雜劑是銻和砷。?
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Buried?Oxide?Layer?(BOX)?-?The?layer?that?ins*不良詞語
*ates between the two wafers.
氧化埋層(BOX)——在兩個晶圓片間的絕緣層。?
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Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
載流子——晶圓片中用來傳導(dǎo)電流的空穴或電子。?
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Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化學(xué)-機(jī)械拋光(CMP)——平整和拋光晶圓片的工藝，采用化學(xué)移除和機(jī)械拋光兩種方式。此工藝在前道工藝中使用。?
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Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
卡盤痕跡——在晶圓片任意表面發(fā)現(xiàn)的由機(jī)械手、卡盤或托盤造成的痕跡。?
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Cleavage Plane - A fracture plane that is preferred.
解理面——破裂面?
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Crack - A mark found on a wafer that is greater than 0.25 mm in length.
裂紋——長度大于0.25毫米的晶圓片表面微痕。?
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Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
微坑——在擴(kuò)散照明下可見的，晶圓片表面可區(qū)分的缺陷。?
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Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
傳導(dǎo)性（電學(xué)方面）——一種關(guān)于載流子通過物質(zhì)難易度的測量指標(biāo)。?
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Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
導(dǎo)電類型——晶圓片中載流子的類型，N型和P型。?
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Contaminant,?Partic*不良詞語
*ate (see light point defect)
污染微粒（參見光點缺陷）?
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Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
沾污區(qū)域——部分晶圓片區(qū)域被顆粒沾污，造成不利特性影響。?
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Contamination?Partic*不良詞語*ate?-?Particles?found?on?the?surface?of?a?silicon?wafer.?
沾污顆?！A片表面上的顆粒。?
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Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
晶體缺陷——部分晶體包含的、會影響電路性能的空隙和層錯。
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Crystal Indices (see Miller indices)
晶體指數(shù)（參見米勒指數(shù)）?
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Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
耗盡層——晶圓片上的電場區(qū)域，此區(qū)域排除載流子。?
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Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
表面起伏——在合適的光線下通過肉眼可以發(fā)現(xiàn)的晶圓片表面凹陷。?
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Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
施主——可提供“自由”電子的攙雜物，使晶圓片呈現(xiàn)為N型。?
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Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
攙雜劑——可以為傳導(dǎo)過程提供電子或空穴的元素，此元素可以改變傳導(dǎo)特性。晶圓片攙雜?劑可以在元素周期表的III和V族元素中發(fā)現(xiàn)。?
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Doping - The process of the donation of an electron or hole to the conduction process by a dopant.
摻雜——把攙雜劑摻入半導(dǎo)體，通常通過擴(kuò)散或離子注入工藝實現(xiàn)。
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Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
芯片邊緣和縮進(jìn)——晶片中不完整的邊緣部分超過0.25毫米。?
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Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
邊緣排除區(qū)域——位于質(zhì)量保證區(qū)和晶圓片外圍之間的區(qū)域。（根據(jù)晶圓片的尺寸不同而有所不同。）?
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Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
名義上邊緣排除(EE)——?質(zhì)量保證區(qū)和晶圓片外圍之間的距離。?
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Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
邊緣輪廓——通過化學(xué)或機(jī)械方法連接起來的兩個晶圓片邊緣。
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Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
蝕刻——通過化學(xué)反應(yīng)或物理方法去除晶圓片的多余物質(zhì)。?
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Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
質(zhì)量保證區(qū)(FQA)——晶圓片表面中央的大部分。?
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Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
平邊——晶圓片圓周上的一個小平面，作為晶向定位的依據(jù)。
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Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicar to the flat)
平口直徑——由小平面的中心通過晶圓片中心到對面邊緣的直線距離。?
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Four-Point Probe - Test equipment used to test resistivity of wafers.
四探針——測量半導(dǎo)體晶片表面電阻的設(shè)備。?
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Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
爐管和熱處理——溫度測量的工藝設(shè)備，具有恒定的處理溫度。
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Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
正面——晶圓片的頂部表面（此術(shù)語不推薦，建議使用“前部表面”）。?
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Goniometer - An instrument used in measuring angles.
角度計——用來測量角度的設(shè)備。?
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Gradient, Resistivity (not preferred; see resistivity variation)
電阻梯度（不推薦使用，參見“電阻變化”）?
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Groove - A scratch that was not completely polished out.
凹槽——沒有被完全清除的擦傷。?
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Hand Scribe Mark—A marking that is hand scratched onto the back surface of a wafer for identification purposes.
?手工印記——為區(qū)分不同的晶圓片而手工在背面做出的標(biāo)記。
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